收藏本站
September 2000
IGBT
SGH23N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
?
?
?
?
High Speed Switching
Low Saturation Voltage : V CE(sat) = 2.1 V @ I C = 12A
High Input Impedance
CO-PAK, IGBT with FRD : t rr = 42ns (typ.)
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
G
G C E
TO-3P
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGH23N60UFD
Units
V CES
V GES
I C
I CM (1)
I F
I FM
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C = 100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
23
12
92
12
92
100
40
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC (IGBT)
R θ JC (DIODE)
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.2
2.5
40
Units
° C / W
° C / W
° C / W
?2000 Fairchild Semiconductor International
SGH23N60UFD Rev. A
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SGH30N60RUFDTU IGBT SHORT CIRC 600V 30A TO-3P
SGH40N60UFDTU IGBT HI PERFORM 600V 20A TO-3P
SGH40N60UFTU IGBT HI PERFORM 600V 20A TO-3P
SGH80N60UFDTU IGBT HI PERFORM 100V 28A TO-3P
SGH80N60UFTU IGBT HI PERFORM 00V 40A TO-3P
SGL160N60UFDTU IGBT ULTRA FAST 600V 160A TO264
SGL50N60RUFDTU IGBT 80A 600V W/DIODE TO-264
SGP10N60RUFDTU IGBT W/DIODE 600V 10A TO-220
相关代理商/技术参数
SGH23N60UFTU 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGH25N120 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH25N120RUF 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH25N120RUFTU 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGH30N60RUF 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH30N60RUFD 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT
SGH30N60RUFDTU 功能描述:IGBT 晶体管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
SGH30N60RUFTU 功能描述:IGBT 晶体管 Dis Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube